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Symposium V: CMP and Post-Polish Cleaning

Symposium V: CMP and Post-Polish Cleaning

Virtual Conference Registration
  • Conference Agenda
  • CSTIC 2023 Call for Papers

Opening Remarks

  • Xinping Qu

    FUdan University

    View
  • Oral Session

  • Poster Session

  • Closing the Loop: CMP Process Control Methodology and Implementation

    Brian Brown

    Applied Materials

    What CMP can do for Waferbonding?

    Knut Gottfried

    Fraunhofer-Institute for Elektronic Nanosystems ENAS

    Characterization of Ceria and Silica Particle Loading on Post CMP Cleaning

    Jin Goo Park

    Hanyang University

    Development of Post CMP Cleaning Chemistry

    Cass Shang

    GrandiT Co. Ltd(中巨芯)

    Challenges and Solutions for Post-CMP Cleaning at Device and Interconnect Levels

    Jihoon Seo

    Clarkson University, Department of Chemical and Biomolecular Engineering

    Nano-ceria particles cleaning by HNO3-H2O2-DIW solution at room temperature

    Yingjie Wang

    Fudan University

    Development of CMP Head-to-Head Compensation Function for Gate Height Uniformity Control (PPT)

    Yurong Que

    HLMC

    Several Strategies for Al Metal Gate Chemical Mechanical Planarization Scratch Reduction (PPT)

    Qingxuan Hong

    HLMC

    Mark Damage Phenomenon Caused by Superimposed CMP Dishing on Large-Area STI Regions (PPT)

    WenSheng Xu

    HLMC

    Chemical Mechanical Planarization of Silicon Dioxide Film in Colloidal Silica based Alkaline Slurry

    Chenwei Wang

    Hebei University of Technology

    Component Optimization of Sapphire Slurry based on Response Surface Methodology for Chemical Mechanical Polishing

    Minghui Qu

    Hebei University of Technology

    Merck Tungsten slurry introduction

    Chun Lu

    Merck

    Defect Law of Cu/Co Pattern Wafers After Using A Novel Bulk/Barrier Slurry and Cleaning Solution

    Lifei Zhang

    Tsinghua University

    IMPROVEMENT OF CU-CMP ENDPOINT CURVES FOR DIFFERENT PATTERN DENSITY (PPT)

    Yi Xian

    HLMC

    Effect of TAZ as inhibitor on CMP process of molybdenum

    Pengfei Wu

    Hebei University of Technology

    Effect of OA and JFCE as Surfactants on the Stability of Copper Interconnection CMP Slurry

    Yan Han

    Hebei University of Technology

    Effect of different complexing agents on chemical mechanical polishing of copper film

    Fu Luo

    Hebei University of Technology

    Improvement of sensitivity of eddy current thickness sensors with ferrite core for CMP process

    Chengxin Wang

    Tsinghua University

  • Dishing improve in Advanced Technology Nodes

    Yu Yang

    HLMC

    An optimized method for Cu CMP dishing improvement

    Lei Zhang

    HLMC

    Study on the correlation between CMP Cu Loading and Edp curve

    Yuanyuan Meng

    HLMC

    Tungsten CMP Consumable Localization study at 28nm Technology Node

    Shaojia Zhu

    HLMC

    CMP Scratch improve in Advanced Technology Nodes

    Weiran Sun

    HLMC

    Dielectric CMP WIW Uniformity Control by FullVision MPC

    Ran Yin

    Applied Materials

    CleanStart Arm in CMP process for CoC reduction

    Yifeng Zheng

    Applied Materials

    WiW iAPC Successful Application in Post CMP Range Control

    Kun Zhang

    Applied Materials

    AMAT PreClean for Ceria CMP Defectivity and Productivity Improvement

    Na Xiao

    Applied Materials

    RR Profile Trend Worse Issue Improved Through HPPC Function

    Huijun Zhang

    Applied Materials

    Study on Preparation and Polishing Performance of Ceria slurry

    Ye Wang

    Hebei University of Technology

    CMP PreClean Module for High Particle Removal efficiency clean

    Pingyuan Lu

    Applied Materials

    Preclean Module for Nano Particle Reduction in Post CMP

    Yongbin Wei

    Applied Materials

    Tool Uptime Improvement and CoC Reduction by HPPC Function

    Shaopeng Zhang

    Applied Materials

    Low Pressure Rinse Improve the Defect of Cu Layers

    Yunlong Wu

    Applied Materials

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