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Symposium IV: Thin Film, Plating and Process Integration

Symposium IV: Thin Film, Plating and Process Integration

Virtual Conference Registration
  • Conference Agenda
  • CSTIC 2023 Call for Papers

Opening Remarks

  • Beichao Zhang

    HFC Semiconductor

    View
  • Oral Session

  • Poster Session

  • Cutting-edge epitaxial processes of group IV materials for advanced technology nodes

    Andriy Hikavyy

    Imec

    Advanced Transisitor Structure Exploration by DTCO method

    Shaofeng Yu

    Fudan University

    Increasing the Post Halo Implantation Anneal Temperature for the Effective Improvement of Threshold Voltage Roll-off Induced by the Unique Non-uniform Boron Diffusion from the Embedded Source/Drain

    Runling Li

    Fudan University

    Investigation of the baking process on the substrate interface and the epitaxial growth

    Zhenya Xu

    Shanghai IC R&D Center

    INVESTIGATION OF NANOSHEET DEFORMATION DURING CHANNEL-RELEASE IN GATE-ALL-AROUND NANOSHEET TRANSISTORS

    Jingwen Yang

    Fudan University

    Pinch off Ultrathin Film Plasma CVD Deposition Process and Material Technology for Nano-device Air Gap/Spacer Formation

    Nguyen Son

    IBM

    The application of Lau’s Schottky-Poole-Frenkel theory to distinguish leakage current mechanisms in high-k MIM capacitors by pattern recognition

    Wai Shing Lau

    Nanyang Technological University

    Minimizing residual stress of aluminum nitride (AlN) thin films using multi-step deposition of DC pulsed sputtering

    Wei-Lun Chen

    National Central University

    Dielectric CVD to address Challenges for Logic, Memory and Packaging Integration

    David Chu

    Applied Materials

    SILICON PHOSPHORUS PROCESS UNIFORMITY IMPROVEMENT STUDY IN ADVANCED NODE (PPT)

    Huojin Tu

    HLMC

    The study of SiGe channel formation for FDSOI (PPT)

    Lan Jiang

    HLMC

    Novel Barrier and Integration Flow for Low Resistance Interconnects

    Lee Brogan

    Lam Research

    Low-temperature Die to Glass Wafer Bonding Based on Au-Au Atomic Diffusion

    Shuchao Bao

    School of Electronic Science and Engineering, Xiamen University

    Proliferation of ALD technology in the nano device era

    Jerry Chen

    ASM

    ALD applications in advanced nodes (Language: In Chinese)

    Weiming Li

    Jiangsu Leadmicro Nano-Equipment Technology Ltd.

    Achieving 100% Gap-Fill for Deep Trenches through Fundamental Understanding of SiO2 PEALD Mechanism

    Toshihisa Nozawa

    Piotech Inc.

    The effect of interfacial and bulk free energies on the leakage current vs voltage characteristics of high-k MIM capacitors prepared by atomic layer deposition

    Wai Shing Lau

    Nanyang Technological University

    Enhanced Fill of Tungsten in 3D NAND Wordline: A View of Molecular Diffusion

    Xin Gan

    Lam Research

    2D material and applications

    Zhihong Chen

    Purdue University

    A Hybrid Modelling Approach for the Digital Twin of Device Fabrication

    Dong Ni

    Zhejiang University

  • Effects of coil surface current density on plasma characteristics in a PECVD chamber

    Jiangjie Zeng

    Jiangsu Normal University

    Metal Gate inline Vt Variation Improvement for Advanced Technology

    Canyang Xu

    Applied Materials

    Aluminum Gap Fill Improvement For 28 HKMG Process

    Shihao Wang

    HLMC

    AMAT High Throughput HDPCVD Ultima XT Introduction

    Tengfei Zhang

    Applied Materials

    Research on the oxidation behavior of Titanium nitride thin films and Resistance simulation

    Xiaotong Zhang

    HLMC

    Improvement of Aluminum Diffusion In HKMG Process

    Xiaoyang Xi

    HLMC

    ALUMINUM NITRIDE BASED ETCH STOP LAYER TO ELIMINATE ILD OVER-ETCH ISSUES IN LOGIC BEOL VIA PATTERNING

    Jiang Yu

    Lam Research

    INVESTIGATION OF 14 NM CONTACT TUNGSTEN GAP-FILLING PERFORMANCE

    Xiaofang Wang

    HLMC

    Improve SADP/SAQP ALD SIN spacer uniformity by patterned dummy

    Xin Xu

    Shanghai IC R&D Center

    Decoupled-plasma Oxidation Process to Improve ALD Oxide Film Quality as IO Device Gate Oxide

    Xin Xu

    Shanghai IC R&D Center

    Influence of Material Manufacturing Method on the Growth of Aluminum Fluoride on Heater surface in Plasma Enhanced Chemical Vapor Deposition

    Xiaochen Wang

    Piotech Inc.

    The influence of O3/TEOS and He/TEOS flow ratio on gap filling of shallow trench isolation filled with silicon oxide in sub-atmospheric chemical vapor deposition

    Zhenjie Liu

    Piotech Inc.

    Impact of SiOx Underlayer on PECVD Amorphous Silicon Film Edge Peeling Defect

    Cherry Xu

    Lam Research

    Effects of stacked Al2O3 / HfO2 films deposited in Deep Trench Isolation on White Pixels Noise

    Qixin Wu

    Semiconductor Manufacturing International Corporation(SMIC)

    Uniformity optimization and defect reduction of Precision TEOS process

    Junmei Li

    Applied Materials

    Thick Epi Process Development on CENTURA ATM Epi System

    Xingxing Liu

    Applied Materials

    Applied Materials® Impulse PVD SiN for DRAM Bitline Rs Reduction

    Jiachuan Wu

    Applied Materials

    EPI JIT function balance wafer process parameter

    Junyi Hu

    Applied Materials

    HARP Liner Penetration in Planar NAND Production

    Songtao Lv

    Applied Materials

    Property and profile fine tune in an ICEFill tungsten deposition process

    Kevin Tian

    Lam Research

    LHPC Contribution to Oxide Thickness

    Yuning Song

    Applied Materials

    Advanced carbon hardmask for 3D NAND: challenges and solutions

    Pengyi Zhang

    Lam research

    Adaptive Preheat Application on RPO Process

    Zhipeng Luo

    Applied Materials

    FILM PROPERTY ANALYSIS BY FTIR ON ULK FILM DEPOSITION AND UV CURING PROCESS

    Xinchen Cai

    Piotech Technology Co., LTD.

    Inhibition-Control-Enhancement Fill (ICEFill™) Dielectric PEALD for HAR Structure Gap Fill

    Xin Liu

    Lam Research

    Analysis of Influence to Gate stack of EEPROM Using Cl doped Re-Oxidation

    Hong Zhang

    Fudan University

    TiSi Anneal Process Improvement in Advanced CMOS Technology

    Qi Zhang

    Applied Materials

    Optimization of Defect and range for Thick TEOS Oxide Deposition in 3D NAND Application

    Chujia Huang

    Applied Materials (China), Inc.

    The effect of STI divot on planner logic device performance study

    Zhenchao Sui

    Semiconductor Manufacturing North China (Beijing) Corporation(SMNC)

    Solution and Mechanism for Producer GT TEOS WER Mismatch

    Aoju Li

    Applied Materials

    Solution for Solving the Silane Chamber RPS Path Powder

    Haipeng Chen

    Applied Materials

    Dynamic Planarity Control for Auto and Independent Hot Leveling

    Haipeng Chen

    Applied Materials

    300mm Wafer Laser Anneal Process Development for Applications of Multiple Process Condition in Different Zones on Single Wafer

    Zhenghui Chu

    Shanghai ICR&D Center

    Conformal Si STI Liner Epitaxy for Advanced DRAM

    Shiming Liu

    Applied Materials

    Void Free Process Development for Node Contact Gap Fill in DRAM

    Guangyao Shen

    Applied Materials

    I/O ALD Gate-Ox with Plasma Treatment in Advanced Node

    Gengwu Ji

    Applied Materials China

    Post Deposition Purge Optimization for PECVD Process Robustness in Advanced Node

    Chunyuan Zhou

    Lam Research

    A Strategy of Eliminating Salicide Block Film Bubbles

    Chao Bao

    HHGrace

    An Achievement of Low Resistance Non-salicide CT on Active Area

    Bingquan Wang

    SMIC

    TaN Based Metal-Insulator-Metal Capacitor with Excellent Long-term Reliability

    Linlin Zhang

    HHgrace

    A Strategy of Eliminating Silicon Dislocation in 55nm Node Technology

    Chao Bao

    HHGrace

    12-inch 90-nm BCD Process Optimization Reducing Wafer Edge LDMOS Leakage

    Guangyuan Lu

    Hhgrace

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